Semiconductor gas and fluid infrastructure operates under extreme purity and reliability constraints. In ultra-high-purity (UHP) gas delivery systems, even minor surface irregularities, microcracks, or embedded burrs can become long-term particle generation sites. Those particles can translate directly into yield loss, downtime, and contamination risk at the wafer level.
 

Conventional machining methods have shortfalls: they can introduce thermal effects, recast layers, or microfractures, particularly in high-strength copper alloys and stainless steels used in advanced cooling plates and gas manifolds. These process-induced artifacts are often invisible at the macro scale but become critical under high flow rates, thermal cycling, and reactive gas exposure.
 

PECM addresses these risks through controlled anodic dissolution rather than mechanical shear or thermal ablation. Because material removal is electrochemical and non-contact, the process avoids introducing heat-affected zones or mechanically induced stress concentrations. The result? Smooth internal flow paths and controlled edge definition within enclosed geometries that are otherwise difficult to access.
 

For gas manifolds and flow control components, internal geometry consistency is equally important. Feature-to-feature repeatability ensures predictable flow distribution across microhole arrays and parallel channels. Variability in hole diameter, taper, or entrance geometry can create uneven pressure distribution or localized turbulence, which may influence gas mixing or deposition uniformity downstream.
 

Voxel’s vertically integrated approach—spanning cathode design, electrolyte control, and pulse parameter optimization—allows internal features to be tuned for both geometry and surface condition. PECM provides a repeatable pathway for producing complex internal architectures while minimizing process-induced variability.